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 CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTA123JEPT
CURRENT 100 mAmpere
FEATURE
* Small surface mounting type. (SC-75/SOT-416) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=2.2k, Typ. )
0.1 0.20.05 0.5 1.60.2 0.5
SC-75/SOT-416
(2)
(3)
1.00.1 0.1 0.30.05
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one package.
0.1 0.20.05 0.80.1
(1)
MARKING
JE1
Gnd In 1
0.150.05 0.1Min.
0.6~0.9 0~0.1 1.60.2
CIRCUIT
2
R2 TR R1
3 Out
Dimensions in millimeters
SC-75/SOT-416
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board.
2003-02
PARAMETER Supply voltage Input voltage
CONDITIONS -
MIN.
MAX. -50 +5 -100 V V
UNIT
-12 - - Tamb 25 OC, Note 1 - -55 - junction - soldering point -
mA -100 150 +150 150 140 mW
O
Total power dissipation Storage temperature Junction temperature Thermal resistance
C C C/W
O
O
RATING CHARACTERISTIC ( CHDTA123JEPT )
CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IC=-5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-5.0mA; VO=-0.3V IO=-5mA; II=-0.25mA VI=-5V VI=0V; VCC=-50V IO=-10mA; VO=-5.0V - - - - 80 1.54 17 - MIN. -0.5 - - -0.1 - - - 2.2 21 250 TYP. - -1.1 -0.3 -3.6 -0.5 - 2.86 26 - K MHz MAX. V V V mA uA UNIT
Note 1.Pulse test: tp300uS; 0.02.
RATING CHARACTERISTIC CURVES ( CHDTA123JEPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current (ON characteristics)
-100
Fig.2 Output current vs. input voltage (OFF characteristics)
-10m -5m -2m -1m -500 -200 -100 -50 -20 -10 -5 -2 -1 0
Ta=100C 25C -40C
VO=-0.3V
INPUT VOLTAGE : VI(on) (V)
-20 -10 -5 -2 -1 -500m -200m -100m -100 -200 -500 -1m -2m Ta=-40C 25C 100C
OUTPUT CURRENT : Io (A)
-50
VCC=-5V
-5m -10m -20m -50m -100m
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
Fig.3 DC current gain vs. output current
1k 500
Fig.4 Output voltage vs. output current
-1
OUTPUT VOLTAGE : VO(on) (V)
VO=-5V
Ta=100C 25C -40C
-500m -200m -100m -50m -20m -10m -5m -2m -1m -100 -200 -500 -1m -2m
lO/lI=20
Ta=100C 25C -40C
DC CURRENT GAIN : GI
200 100 50 20 10 5 2
1 -100 -200 -500 -1m -2m
-5m -10m -20m -50m -100m
-5m -10m -20m -50m -100m
OUTPUT CURRENT : IO (A)
OUTPUT CURRENT : IO (A)


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